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ON Semiconductor BSS123LT1G

ON Semiconductor

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BSS123LT1G

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ON Semiconductor

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MOSFET N-CH 100V 170MA SOT-23

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ON Semiconductor BSS123LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSS123LT1G.

Parameter	Value
Factory Lead Time	15 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	170mA Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	225mW Ta
Turn Off Delay Time	40 ns
Operating Temperature	-55u00b0C~150u00b0C TJ
Packaging	Cut Tape (CT)
Published	2003
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	6Ohm
Voltage - Rated DC	100V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	170mA
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225mW
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 u03a9 @ 100mA, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 25V
Vgs (Max)	u00b120V
Continuous Drain Current (ID)	170mA
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Nominal Vgs	20 V
Height	1.01mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free