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ON Semiconductor BC857CDW1T1G
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ON Semiconductor BC857CDW1T1G

ON Semiconductor

Manufacturer No:

BC857CDW1T1G

Manufacturer:

ON Semiconductor

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Description:

ON SEMICONDUCTOR - BC857CDW1T1G - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 380 mW, -100 mA, 270 hFE

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ON Semiconductor BC857CDW1T1G information

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ON Semiconductor BC857CDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC857CDW1T1G.
ParameterValue
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Collector-Emitter Saturation Voltage -650mV
hFEMin 420
Number of Elements 2
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Voltage - Rated DC -45V
Max Power Dissipation 380mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC857CD
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 380mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 1.1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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